High aspect ratio plasma etching
Web16 de fev. de 2024 · The experiment was investigated in a radio-frequency-biased inductively coupled plasma with an Ar/C 4 F 6 mixture. It is revealed that even a slight ion tilts (1–3°) induce large changes in etch characteristics, such as etch-stop, asymmetric and vertical etching, which strongly depend on the trench arrangement, location, and aspect … Web13 de dez. de 2024 · High Aspect Ratio (HAR) contact formation is a necessary process in advanced memory technology nodes. A widely used method for HAR contact is cryogenic plasma etch with CxHyFz gases. Such a process faces different technical challenges including contact punch through, contact open and high contact to contact capacitance. …
High aspect ratio plasma etching
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Web摘要： Etch anisotropy and microscopic uniformity have been investigated in low-pressure, high-density plasma etching environments. Polycrystalline Si films masked with a … Web14 de abr. de 2024 · We speculate that the gradual deepening of the trench and the property of the high aspect ratio of the trench contribute to the reduced efficiency of the plasma …
Web8 de nov. de 2016 · Micromachining silicon carbide (SiC) is challenging due to its durable nature. However, plasma and laser etch processes have been utilized to realize deep and high aspect ratio (HAR) features in SiC substrates and films. HAR topologies in SiC can improve SiC-based MEMS transducers (reduced electrostatic gaps) and enable … WebMethods and apparatus for laterally etching unwanted material from the sidewalls of a recessed feature are described herein. In various embodiments, the method involves …
Web16 de fev. de 2024 · Plasma Etching of Deep High-Aspect Ratio Features Into Fused Silica Abstract: This paper reports research performed on developing and optimizing a process … Web10 de dez. de 2024 · In particular, high aspect ratio (HAR) devices (aspect ratios now exceeding 100) have more demanding requirements for anisotropy of incident ions and profile control, and less need for selectivity. Given these changing requirements, re-examination of the benefits and detriments of ICP vs. CCP for dielectric etching would …
Web30 de dez. de 2024 · CHORUS Collections ABSTRACT The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the …
Web8 de nov. de 2016 · However, plasma and laser etch processes have been utilized to realize deep and high aspect ratio (HAR) features in SiC substrates and films. HAR … csharp jsonpropertyWebA plasma etching method of an embodiment includes etching a silicon-containing film using plasma of a fluorocarbon gas. The fluorocarbon gas contains fluorocarbon which has a composition, regarding carbon and fluorine, represented by a general formula: C x F y , where x and y are numbers satisfying x≥12 and x≥y, and which includes two benzene … c sharp key chordsWeb31 de jan. de 2011 · A new SiH4/Cl2 chemistry is proposed for the high-aspect-ratio etching of InP-based heterostructures. Anisotropic etching is obtained through the deposition of a SiOx passivation layer on the etched sidewalls. SiH4 has been chosen as a single precursor for both Si and H species that are necessary to promote the passivation … c sharp keywordsWeb8 de jan. de 2024 · As aspect ratios of features in microelectronics fabrication increase to beyond 100, transferring patterns using plasma etching into underlying materials … eac とは itWeb17 de jan. de 2024 · Fabrication of semiconductor devices having three-dimensional (3D) structures places unprecedented demands on plasma etching processes. Among these demands is the frequent need to simultaneously etch features with a wide variety of aspect ratios (AR) on the same wafer. Many plasma etching processes exhibit aspect ratio … ead10驱动Web23 de abr. de 2007 · High-aspect-ratio oxide etching using CF4/C6F12O plasma in an inductively coupled plasma etching system with low-frequency bias power 2024, Plasma Processes and Polymers Fast and realistic 3D feature profile simulation platform for plasma etching process 2024, … ead 1200Web16 de fev. de 2024 · Abstract: This paper reports research performed on developing and optimizing a process recipe for the plasma etching of deep high-aspect ratio features into fused silica (fused quartz) material using an inductively coupled plasma reactive-ion etch process. As part of this effort, we performed a design of experiments (DOE), … ead13002